Thin film single halo (SH) SOI nMOSFETs-hot carrier reliability for mixed mode applications

Abstract

For the first time, we report a study on the hot carrier reliability performance of single halo (SH) thin film silicon-on-insulator (SOI) nMOSFETs for mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and a low impurity concentration in the rest of the channel. Besides having excellent DC output characteristics, better V_th-L roll-off control, lower DIBL, higher breakdown voltages and kink free operation, these devices show higher AC transconductance, higher output resistance and better dynamic intrinsic gain (g_mR₀). Experimental results show that SH SOI MOSFETs exhibit a lower hot carrier degradation in small-signal transconductance and dynamic output resistance, in comparison with the conventional (CON) homogeneously doped SOI MOSFETs. From 2D device simulations, the lower hot carrier degradation mechanism in SH-SOI MOSFETs is analyzed and compared with the conventional SOI MOSFETs.