Jha, N. K. ; Rao, V. R. (2004) Understanding the NBTI degradation in halo-doped channel p-MOSFETs Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Hinshcu, Taiwan . pp. 311-314.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IPFA.2004.1345639
Abstract
The role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Hinshcu, Taiwan. |
| ID Code: | 79763 |
| Deposited On: | 28 Jan 2012 11:50 |
| Last Modified: | 28 Jan 2012 11:50 |
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