Joshi, M. ; Singh, S. ; Swain, B. ; Patil, S. ; Dusane, R. ; Rao, R. ; Mukherji, S. (2004) Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films Proceedings of the IEEE INDICON 2004 . pp. 538-541.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/INDICO.2004.1497814
Abstract
Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O2 plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the IEEE INDICON 2004. |
| ID Code: | 79760 |
| Deposited On: | 28 Jan 2012 11:50 |
| Last Modified: | 28 Jan 2012 11:50 |
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