Narasimhulu, K. ; Ramgopal Rao, V. (2006) xAnalog device and circuit performance degradation under substrate bias enhanced hot carrier stress 44th Annual International Reliability Physics Symposium (IRPS), San Jose, California, USA . pp. 465-470.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/RELPHY.2006.251263
Abstract
In this paper, we investigate the influence of forward and reverse body bias stress on the hot carrier induced degradation of MOS analog performance parameters. The underlying physical mechanisms are identified with the help of experimental results, TCAD and Monte-Carlo simulations. We show that under forward body bias stress conditions, the auger recombination enhanced hot carrier injection (HCI) degrades the device and circuit performance considerably. Degradation in various analog circuits' performance is quantified by considering the individual transistors under different stress conditions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to 44th Annual International Reliability Physics Symposium (IRPS), San Jose, California, USA. |
| ID Code: | 79754 |
| Deposited On: | 28 Jan 2012 11:52 |
| Last Modified: | 28 Jan 2012 11:52 |
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