Sarkar, Partha ; Mallik, Abhijit ; Sarkar, Chandan Kumar ; Ramgopal Rao, V. (2006) The effects of varying tilt angle of halo implant on the performance of sub 100nm LAC MOSFETs International Conference on Industrial and Information Systems, Srilanka . pp. 115-118.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/ICIIS.2006.365647
Abstract
In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and Ion/Ioff, and lower junction capacitance.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to International Conference on Industrial and Information Systems, Srilanka. |
| ID Code: | 79753 |
| Deposited On: | 28 Jan 2012 11:52 |
| Last Modified: | 28 Jan 2012 11:52 |
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