Hariharan, V. ; Vasi, Juzer ; Ramgopal Rao, V. (2007) Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2 Proceedings of the 2007 International Semiconductor Device Research Symposium (ISDRS), Universit of Maryland, College Park, USA . pp. 1-2.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/ISDRS.2007.4422298
Abstract
In this paper we present for the first time a single-equation inversion-charge-based drain current model for SDGFETs based on the drift-diffusion transport mechanism using an exponent n=2 for velocity saturation, that is neither threshold voltage-based nor charge-sheet-based. Because it is not based on any charge sheet models, it automatically models phenomena specific to ultra-thin DGFETs such as volume inversion. We present the model equations and the final results showing analytical versus 2D device simulation results.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 2007 International Semiconductor Device Research Symposium (ISDRS), Universit of Maryland, College Park, USA. |
| ID Code: | 79748 |
| Deposited On: | 28 Jan 2012 11:54 |
| Last Modified: | 28 Jan 2012 11:54 |
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