Maji, D. ; Crupi, F. ; Magnone, P. ; Giusi, G. ; Pace, C. ; Simoen, E. ; Rao, V. R. (2009) Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-4.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/EDST.2009.5166133
Abstract
The interface trap density of fresh TiN/TaN gated HfO2/SiO2/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India. |
| ID Code: | 79741 |
| Deposited On: | 28 Jan 2012 11:56 |
| Last Modified: | 28 Jan 2012 11:56 |
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