Shrivastava, M. ; Schneider, J. ; Jain, R. ; Baghini, M. S. ; Gossner, H. ; Ramgopal Rao, V. (2009) IGBT plugged in SCR device for ESD protection in advanced CMOS technology 31st IEEE Annual InternationaEOS/ESD Symposium, Anaheim, CA, USA . pp. 1-9.
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Abstract
We have proposed modifications in the standard SCR structure to inherently improve quasi static triggering voltage, transient overshoot and trigger time without changing its failure threshold and holding voltage. The device is an useful option for the protection of low voltage interfaces and power domains in advanced CMOS reaching from 1 V to 3.6 V.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to 31st IEEE Annual InternationaEOS/ESD Symposium, Anaheim, CA, USA. |
| ID Code: | 79737 |
| Deposited On: | 28 Jan 2012 11:56 |
| Last Modified: | 28 Jan 2012 11:56 |
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