Gupta, P. K. ; Chopra, K. L. (1988) Amorphous silicon as a resist material Electron Device Letters, IEEE, 9 (1). pp. 17-19. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/55.20399
Abstract
Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF4 plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are ~1018 ions/cm2 and 1.1, respectively. The effect of exposure time on etching characteristics was also studied.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 76419 |
| Deposited On: | 31 Dec 2011 14:44 |
| Last Modified: | 31 Dec 2011 14:44 |
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