Kumar, Satyendra ; Tiwari, A. N. ; Sastry, O. S. ; Pandya, D. K. ; Chopra, K. L. (1986) a-Si:H/CuInS2 heterojunctions for photovoltaic conversion Bulletin of Materials Science, 8 (3). pp. 285-289. ISSN 0250-4707
![[img]](https://repository.ias.ac.in/style/images/fileicons/application_pdf.png)
|
PDF
- Publisher Version
547kB |
Official URL: http://www.ias.ac.in/j_archive/bms/8/3/285-290/vie...
Related URL: http://dx.doi.org/10.1007/BF02744134
Abstract
Heterojunctions of hydrogenated a-Si films prepared by r.f. sputtering with spraypyrolyzed CuInS2 films have been studied. Capacitance-voltage measurements establish the formation of abrupt heterojunction. The barrier height varies from 0.26 to 0.55 V as the resistivity of CuInS2 film decrease from 1.5×103 to 65 Ωm. These junctions exhibit photovoltaic behaviour with Voc=220 mV and Isc=0.20 mA/cm2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Heterojunction; a-Si:H; CuInS2; Photovoltaics |
| ID Code: | 76417 |
| Deposited On: | 31 Dec 2011 14:43 |
| Last Modified: | 18 May 2016 20:04 |
Repository Staff Only: item control page
