Das, S. R. ; Nath, P. ; Banerjee, A. ; Vankar, V. D. ; Chopra, K. L. (1978) Stoichiometric Cu2S thin films for solar cells Proceedings of the International Solar Energy Congress on Sun: Mankind's future source of energy, 2 . pp. 694-697.
Full text not available from this repository.
Official URL: http://adsabs.harvard.edu//abs/1978smfs.conf..694D
Abstract
Cu2S thin films of well controlled thickness and stoichiometry have been prepared by a solid state reaction between CdS and CuCl films in the temperature range 200-250 C. The Cu2S films grow topotactially on CdS and the orthorhombic chalcocite phase is obtained on reaction with both wurtzite and sphalerite structures of CdS. The electrical and optical properties of the Cu2S/CdS thin film solar cells fabricated with these films exhibit efficiencies of approximately 5%. Better degradation characteristics are observed in a new geometry where Cu2S is placed below the CdS layer.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the International Solar Energy Congress, New Delhi. |
| ID Code: | 76409 |
| Deposited On: | 31 Dec 2011 14:42 |
| Last Modified: | 31 Dec 2011 14:42 |
Repository Staff Only: item control page
