Prakash, T. ; Ramasamy, S. ; Murty, B. S. (2011) Influence of bias voltage on dielectric relaxation of nanocrystalline anatase TiO2 using modulus formalism Journal of Applied Physics, 109 (8). 084116-084120. ISSN 0021-8979
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Official URL: http://link.aip.org/link/?JAPIAU/109/084116/1
Related URL: http://dx.doi.org/10.1063/1.3567934
Abstract
Dielectric relaxation in sol-gel-derived anatase titanium oxide nanocrystals (6, 9, and 20 nm) has been investigated using impedance spectroscopy in a wide frequency range from 1 Hz to 1 MHz as a function of applied DC bias voltage, ranging from 0 to 4.2 V in a periodic interval of 0.3 V. Under the equilibrium condition, around three order of magnitude variations in the dielectric relaxation time (t) was observed for the grain size if reduced to 6 nm from 20 nm. An unambiguous evidence for the absence of such a crystallite size effect was experimentally observed in higher biased conditions because of grain boundary Schottky potential barrier height suppression. These experimental results obey the "grain boundary double Schottky barrier model."
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Crystallites; Dielectric Relaxation; Grain Size; Nanofabrication; Nanostructured Materials; Schottky Barriers; Semiconductor Growth; Semiconductor Materials; Sol-gel Processing; Titanium Compounds |
| ID Code: | 73777 |
| Deposited On: | 07 Dec 2011 05:08 |
| Last Modified: | 07 Dec 2011 05:08 |
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