Ghosh, A. (1999) Charge carrier transport with weak coupling in BaBiO3 Solid State Communications, 112 (1). pp. 45-47. ISSN 0038-1098
Full text not available from this repository.
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0038-1098(99)00284-7
Abstract
We have presented the electrical conductivity for the semiconducting BaBiO3 as a function of temperature. We have observed that the conductivity is nonactivated and that the variable range hopping and the small polaron hopping cannot dominate the charge transport process in BaBiO3 like other semiconductors. On the contrary, we have observed that the logarithmic conductivity is proportional to Tp where the exponent p is independent of temperature. We have shown that the charge transport process occurs by the multiphonon assisted hopping of the charge carriers that interact weakly with phonons.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Semiconductors; D. Electronic Transport; D. Electron-phonon Interactions; D. Valence Fluctuations |
| ID Code: | 72852 |
| Deposited On: | 29 Nov 2011 12:52 |
| Last Modified: | 29 Nov 2011 12:52 |
Repository Staff Only: item control page
