Das, D. ; Chakravorty, D. (2000) Interfacial conduction in silica gels containing nanocrystalline copper oxide Applied Physics Letters, 76 (10). pp. 1273-1275. ISSN 0003-6951
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Official URL: http://apl.aip.org/applab/v76/i10/p1273_s1?isAutho...
Related URL: http://dx.doi.org/10.1063/1.126006
Abstract
Nanometer-sized copper particles have been grown within a gel derived glass in the system 60 CuO, 40SiO2(mole%). By heat treatment at temperatures in the range of 450-850°C, copper oxide shells of thickness varying from 1.1 to 1.7 nm have been produced. DC resistivity measurements carried out over the temperature range of 30-300°C show a drastically reduced activation energy as compared to that of a reference sample with the above composition. This is ascribed to the presence of an interfacial amorphous phase generated by the assembly of nanosized copper oxide particles.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 7255 |
| Deposited On: | 25 Oct 2010 12:01 |
| Last Modified: | 28 May 2011 04:40 |
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