Bhattacharyya, S. ; Saha, S. K. ; Chakravorty, D. (2000) Silver nanowires grown in the pores of a silica gel Applied Physics Letters, 77 (23). pp. 3770-3772. ISSN 0003-6951
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Official URL: http://apl.aip.org/applab/v77/i23/p3770_s1?isAutho...
Related URL: http://dx.doi.org/10.1063/1.1327278
Abstract
Silver nanowires of diameter ~40 nm and length ~0.3 mm have been grown by electrodeposition within the pores of silica gels which were heat treated in the temperature range 523 to 823 K and, subsequently, soaked in a silver nitrate solution. A staircase current-voltage characteristic was observed in the direction of electrodeposition after nanowires were disrupted by the application of a dc voltage pulse. Such gels containing interrupted nanowires of silver showed a dielectric constant value ~104 both in directions parallel and perpendicular to that of electrodeposition.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 7254 |
| Deposited On: | 25 Oct 2010 12:02 |
| Last Modified: | 28 May 2011 04:41 |
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