Asokan, S. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) Evidence for a new metastable crystalline compound in Ge-Te system Materials Research Bulletin, 21 (2). pp. 217-224. ISSN 0025-5408
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0025-5408(86)90209-6
Abstract
Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100-x glasses (15 ≤ x ≤ 28) has been studied up to 8GPa pressure. All the glasses exhibit a sharp, discontinuous glass to crystal transition under pressure. The high pressure crystalline phases are identified to have a face centered cubic structure. The value of the cell constant is 0.779nm for 15 ≤ x ≤ 17, 0.642nm for x=20 and 0.55lnm for 22 ≤ x ≤ 28 samples respectively. The cell constants of the high pressure crystalline phases suggest the possible existance of a new metastable crystalline compound in the Ge-Te system with F.C.C. structure and cell constant equal to 1.109nm as reported by Moore et al.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | GexTe100-x alloys; Amorphous semiconductors; chalcogenide glasses |
| ID Code: | 71134 |
| Deposited On: | 25 Nov 2011 12:58 |
| Last Modified: | 25 Nov 2011 12:58 |
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