Prasad, M. V. N. ; Asokan, S. ; Parthasarathy, G. ; Titus, S. S. K. ; Gopal, E. S. R. (1993) High pressure electrical resistivity studies on Ga-Te glasses High Pressure Research, 11 (4). pp. 195-200. ISSN 0895-7959
Full text not available from this repository.
Official URL: http://www.tandfonline.com/doi/abs/10.1080/0895795...
Related URL: http://dx.doi.org/10.1080/08957959308201646
Abstract
Bulk, semiconducting GaxTe100-x (17 ≤ x ≤ 25) glasses are prepared by the meltingh quenching method and electrical resistivity measurements are carried out at high pressures up to 8 GPa and low temperatures down to 77 K in a Bridgman anvil system. It is found that all the GaxTe100-x (17 ≤ x ≤ 25) glasses are prep, glasses exhibit metallization under pressure, with a continuous decrease in electrical resistivity and activation energy for conduction. Further, the high pressure metallic phases of GaxTe100-x (17 ≤ x ≤ 25) glasses are prep samples are found to be crystalline.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Group. |
| Keywords: | Metallization under Pressure; Bulk Semiconducting Glasses; High Pressure |
| ID Code: | 71125 |
| Deposited On: | 25 Nov 2011 13:04 |
| Last Modified: | 25 Nov 2011 13:04 |
Repository Staff Only: item control page
