Bhatia, K. L. ; Gosain, D. P. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase Physical Review B: Condensed Matter and Materials Physics, 33 (2). pp. 1492-1494. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v33/i2/p1492_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.33.1492
Abstract
The electrical resistivity of layerd crystalline GeSe has been investigated up to a pressure of 100 kbar and down to liquid-nitrogen temperature by use of a Bridgman anvil device. A pressure-induced first-order phase transition has been observed in single-crystal GeSe near 6 GPa. The high-pressure phase is found to be quenchable and an x-ray diffraction study of the quenched material reveals that it has the face-centered-cubic structure. Resistivity measurements as a function of pressure and temperature suggest that the high-pressure phase is metallic.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 71108 |
| Deposited On: | 24 Nov 2011 03:50 |
| Last Modified: | 24 Nov 2011 03:50 |
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