Bhatia, K. L. ; Parthasarathy, G. ; Sharma, Ashwani ; Gopal, E. S. R. (1988) Carrier-sign reversal in Bi-doped bulk amorphous semiconductors Ge2Te80-xBix Physical Review B: Condensed Matter and Materials Physics, 38 (9). pp. 6342-6344. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v38/i9/p6342_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.38.6342
Abstract
A p-n transition in the electronic conduction in Bi-doped bulk amorphous semiconductors Ge2Te80-xBix at about x=3.5 has been observed for the first time. n-type conduction has been established by the measurement of thermoelectric power that becomes negative at x~3.5. Measurement of the electrical transport under high quasihydrostatic pressure (p≤ 120 kbar) has also been studied in x=0,2,3,4,6 compositions. Electrical resistivity (ρ ), thermal activation energy (Δ E), and (dlog10ρ/dp) show a sudden drop in their values in the ρ -n transition region (x=3-4). Results are discussed in the light of Phillip's model of microclusters and constraint theory.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 71095 |
| Deposited On: | 24 Nov 2011 03:55 |
| Last Modified: | 24 Nov 2011 03:55 |
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