Electronic conduction in bulk Se_1-xTe_x glasses at high pressures and at low temperatures

Abstract

The electrical resistivity of bulk Se_1-x Te_x glasses is reported as a function of pressure (up to 8 GPa) and temperature (down to 77K). The activation energy for electronic conduction has been calculated at different pressures. The samples with 0 ≤ x ≤ 0·06 show a single activation energy throughout the temperature range of investigations. On the other hand samples with 0·08 ≤ x ≤ 0·3 show two activation energies in the different regions of temperature. The observed behaviour has been explained on the basis of band picture of amorphous semiconductors.