Prasad, M. V. N. ; Asokan, S. ; Parthasarathy, G. ; Titus, S. S. K. ; Gopal, E. S. R. (1995) Thermal crystallization studies on Ga-Te glasses Journal of Thermal Analysis and Calorimetry, 44 (3). pp. 583-587. ISSN 1388-6150
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Official URL: http://www.springerlink.com/content/623u351g072h21...
Related URL: http://dx.doi.org/10.1007/BF02636277
Abstract
Semiconducting GaxTe100-x (17 ≤ x ≤ 25) glasses have been prepared by melt quenching method and thermal crystallization studies carried out using differential scanning calorimetry. On heating, virgin GaxTe100-x glasses exhibit one glass transition and two crystallization reactions. The first crystallization reaction corresponds to the precipitation of hexagonal Te and the second one to the crystallization of the matrix into zinc blende Ga2Te3 phase. If GaxTe100-x glasses are quenched to ambient temperature from Tcrl and reheated, they exhibit the phenomenon of double glass transition.
Item Type: | Article |
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Source: | Copyright of this article belongs to Springer. |
Keywords: | DSC; Ga-Te Glasses; Thermal Crystallization |
ID Code: | 71049 |
Deposited On: | 24 Nov 2011 04:02 |
Last Modified: | 24 Nov 2011 04:02 |
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