Parthasarathy, G. ; Asokan, S. ; Gopal, E. S. R. ; Bandyopadhyay, A. K. (1986) Pressure induced polymorphous crystallization in bulk Ge20Te80 glass Physica B+C, 139-140 . pp. 266-268. ISSN 0378-4363
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0378-4363(86)90574-7
Abstract
The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is reported. The effect of annealing is also studied. The glass undergoes a polymorphous or congruent crystallization under high pressures. The high pressure phase is found to have fcc structure with α = 6.42 Å . Under thermal treatment the glass undergoes the double stage crystallization. The sample annealed at the first crystallization temperature shows a pressure induced semiconductor-to-metal transition at 4.0 GPa pressure and the crystalline Ge20Te80 samples show the transition at 7 GPa pressure.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 71043 |
| Deposited On: | 24 Nov 2011 03:54 |
| Last Modified: | 24 Nov 2011 03:54 |
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