Agrawal, Neeta ; Tarey, R. D. ; Chopra, K. L. (1989) Effect of hydrogen plasma treatment on CF4 plasma etching characteristics of single-crystal, polycrystalline, and amorphous silicon Journal of Vacuum Science and Technology A, 7 (4). pp. 2701-2704. ISSN 0734-2101
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Official URL: http://link.aip.org/link/?JVTAD6/7/2701/1
Related URL: http://dx.doi.org/10.1116/1.575777
Abstract
A systematic study of etching rates in CF4 plasma of single-crystal, polycrystalline, and amorphous silicon exposed to hydrogen plasma has been carried out. An order of magnitude reduction in the etch rates after H2 plasma treatment has been observed in all cases and has been explained on the basis of an overlayer formation. Electron spectroscopy for chemical analysis and wet etching studies suggest the formation of a C, O, F, and H based complex overlayer, which reduces the CF4 plasma etch rate.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AVS (American Vacuum Society). |
| Keywords: | Silicon; Monocrystals; Films; Polycrystals; Amorphous State; Etching; Surface Treatments; Calcium Fluorides; Hydrogen |
| ID Code: | 69133 |
| Deposited On: | 08 Nov 2011 11:13 |
| Last Modified: | 08 Nov 2011 11:13 |
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