Kumar, Ajay ; Malhotra, L. K. ; Chopra, K. L. (1987) Negative resist behavior of obliquely deposited Ge-Sb-Se thin films Journal of Vacuum Science and Technology A, 5 (3). pp. 354-357. ISSN 0734-2101
Full text not available from this repository.
Official URL: http://avspublications.org/jvsta/resource/1/jvtad6...
Related URL: http://dx.doi.org/10.1116/1.574159
Abstract
The photon and electron-beam induced changes in the selective solubility of Ge-Se-Sb films have been investigated to show that these films can be used as a negative resist. The formation of Sb2Se3 on the top of the film surface after exposure, as confirmed by x-ray diffraction and x-ray photoelectron spectroscopy studies, gives rise to a negative tone behavior. The addition of 10 at. % of Sb in the GeSe3 films saturates the change in the chemical solubility after photo- and electron-beam exposures. The chemical solubility difference can be increased by increasing the angle of deposition and is maximum at 80°. Contrast (γ) and sensitivity (s) values of 2.85 and ˜1020 photons/cm2, respectively, for photons, and 4.2 and 6× 10-5 C/cm2 for electrons have been obtained.
Item Type: | Article |
---|---|
Source: | Copyright of this article belongs to AVS (American Vacuum Society). |
Keywords: | Germanium; Selenium; Antimony; Metallic Glasses; Photoresists; Surface Treatments; Solubility; Crystal Structure; X-ray Diffraction; Electron Collisions; Etching |
ID Code: | 69126 |
Deposited On: | 08 Nov 2011 11:09 |
Last Modified: | 08 Nov 2011 11:09 |
Repository Staff Only: item control page