Gupta, P. K. ; Kumar, Ajay ; Malhotra, L. K. ; Chopra, K. L. (1985) Plasma-processed positive and negative resist behavior of obliquely deposited amorphous P-Se films Journal of Vacuum Science and Technology B, 3 (6). 1590-1593 . ISSN 1071-1023
Full text not available from this repository.
Official URL: http://avspublications.org/jvstb/resource/1/jvtbd9...
Related URL: http://dx.doi.org/10.1116/1.582944
Abstract
Thin films of amorphous phosphorus decaselenide (P4Se10) have been explored for lithographic applications. Depending on the substrate temperature during plasma etching in CF4 gas, either positive or negative resist behavior is observed. The effects of substrate temperature and exposure time on etching characteristics are discussed. Contrast values of 2.5 and 2.9 for positive and negative resist, respectively, have been obtained.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AVS (American Vacuum Society). |
| Keywords: | Plasma Jets, Etching, Surface Reactions,Selenides, Phosphorus Compounds,Lithography, Carbon Tetrafluoride |
| ID Code: | 69117 |
| Deposited On: | 08 Nov 2011 11:00 |
| Last Modified: | 08 Nov 2011 11:02 |
Repository Staff Only: item control page
