Synthesis of tungsten carbide films by RF magnetron sputtering

Srivastava, P. K. ; Rao, T. V. ; Vankar, V. D. ; Chopra, K. L. (1984) Synthesis of tungsten carbide films by RF magnetron sputtering Journal of Vacuum Science and Technology A, 2 (3). pp. 1261-1265. ISSN 0734-2101

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Official URL: http://avspublications.org/jvsta/resource/1/jvtad6...

Related URL: http://dx.doi.org/10.1116/1.572392

Abstract

Thin films of tungsten carbide have been deposited by rf magnetron sputtering in the substrate temperature range of 200-500°C. A mixture of mono-, di-, and tricarbides are formed at low temperatures but a single phase monocarbide is formed at high temperatures. The films consist of randomly shaped granular surface of grain size 400-500 Å . Fractured cross section of the films shows a columnar structure consisting of fine columns of width 300 Å. The interface formed between the film and substrate shows a gradual variation of the concentration of elements over a thickness of 250 Å in thin films. The thicker films show a large interfacial region, and is attributed to a loss in depth resolution due to sputter etching of the film.

Item Type:Article
Source:Copyright of this article belongs to AVS (American Vacuum Society).
Keywords:Tungsten Carbides, Reactive Sputtering,Grain Size, Thin Films, Thickness, Medium Temperature, High Temperature, Low Temperature, Surface Coating
ID Code:69113
Deposited On:08 Nov 2011 11:00
Last Modified:08 Nov 2011 11:01

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