Bhise, Ashok B. ; Late, Dattatray J. ; Walke, Pravin S. ; More, Mahendra A. ; Pillai, Vijayamohanan K. ; Mulla, Imtiaz S. ; Joag, Dilip S. (2007) Sb-doped SnO2 wire: highly stable field emitter Journal of Crystal Growth, 307 (1). pp. 87-91. ISSN 0022-0248
Full text not available from this repository.
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.06.017
Abstract
Field emission investigations of a single Sb-doped SnO2 wire synthesized by thermal evaporation have been carried out in conventional field emission geometry under ultrahigh vacuum. An onset field required to draw a current of 1 nA has been reproducibly observed to be 9.5×103 V/μm. A current density of 5.88×103 A/cm2 has been drawn with an applied field of 2×104 V/μm. The Fowler-Nordheim plot, obtained from the current-voltage (I-V) measurements, shows linear nature in accordance with the quantum mechanical tunneling phenomenon. The field enhancement factor has been estimated to be 26,500 cm-1, indicating that the emission is from the nanometric features of the Sb-doped SnO2 wire. The current-time (I-t) measurement shows high current stability without severe deviations from the initial set value of 1 μA.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A1. Antimony; A1. Field Emission; A1. Field Enhancement Factor; A1. Wires; B1. SnO2 |
| ID Code: | 68940 |
| Deposited On: | 08 Nov 2011 04:42 |
| Last Modified: | 08 Nov 2011 04:42 |
Repository Staff Only: item control page
