Ramgir, Niranjan S. ; Mulla, Imtiaz S. ; Vijayamohanan, K. ; Late, Dattatray J. ; Bhise, Ashok B. ; More, Mahendra A. ; Joag, Dilip S. (2006) Ultralow threshold field emission from a single multipod structure of ZnO Applied Physics Letters, 88 (4). 042107 _1-042107 _3. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v88/i4/p04210...
Related URL: http://dx.doi.org/10.1063/1.2165273
Abstract
The field emission of individual ZnO multipods and a single arm of a multipod structure grown by a vapor deposition were carried out. A current of 1 nA with an ultralow onset voltage of 40 V was observed repeatedly for the single multipod as well as for the arm. The nonlinearity observed in the Fowler-Nordheim plots have been interpreted on the basis of the theory of electron emission from semiconductors and a scheme explaining the field emission behavior in both the high- and low-field regions owing to the very high geometrical factor has been picturized.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Zinc Compounds; II-VI Semiconductors; Wide Band Gap Semiconductors; Electron Field Emission; Vapour Deposition |
| ID Code: | 68922 |
| Deposited On: | 08 Nov 2011 04:40 |
| Last Modified: | 08 Nov 2011 04:40 |
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