Ramanath, G. ; Cui, G. ; Ganesan, P. G. ; Guo, X. ; Ellis, A. V. ; Stukowski, M. ; Vijayamohanan, K. ; Doppelt, P. ; Lane, M. (2003) Self-assembled subnanolayers as interfacial adhesion enhancers and diffusion barriers for integrated circuits Applied Physics Letters, 83 (2). pp. 383-385. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v83/i2/p383_s...
Related URL: http://dx.doi.org/10.1063/1.1591232
Abstract
Preserving the structural and functional integrity of interfaces and inhibiting deleterious chemical interactions are critical for realizing devices with sub-50 nm thin films and nanoscale units. Here, we demonstrate that ~0.7-nm-thick self-assembled monolayers (SAMs) comprising mercapto-propyl-tri-methoxy-silane (MPTMS) molecules enhance adhesion and inhibit Cu diffusion at Cu/SiO2 structures used in device metallization. Cu/SAM/SiO2/Si(001) structures show three times higher interface debond energy compared to Cu/SiO2 interfaces due to a strong chemical interaction between Cu and S termini of the MPTMS SAMs. This interaction immobilizes Cu at the Cu/SAM interface and results in a factor-of-4 increase in Cu-diffusion-induced failure times compared with that for structures without SAMs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Self-Assembly; Monolayers; Adhesion; Diffusion Barriers; Organic Compounds; Metallisation; Copper; Silicon; Elemental Semiconductors |
| ID Code: | 68902 |
| Deposited On: | 08 Nov 2011 04:36 |
| Last Modified: | 08 Nov 2011 04:36 |
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