Giffhorn, M. ; Becker, B. ; Menovsky, A. A. ; Mydosh, J. A. ; Nieuwenhuys, G. J. ; Ramakrishnan, S. ; Schubert, S. ; Eichler, A. (2000) The charge-density-wave transition in Lu5Ir4Si10 under uniaxial pressure High Pressure Research, 18 (1-6). pp. 159-163. ISSN 0895-7959
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Official URL: http://www.tandfonline.com/doi/abs/10.1080/0895795...
Related URL: http://dx.doi.org/10.1080/08957950008200963
Abstract
An uniaxial pressure cell for low temperature use is described in detail. Then we present data of the electrical resistance of single crystals of Lu5Ir4Si10, which is known to show a charge-density-wave transition around 83 K and to become superconducting near 3.8 K, both phenomena being anticorrelated under pressure. Since the CDW in Lu5Ir4Si10 is a quasi one-dimensional phenomenon because of a chain-like structure, it responds to uniaxial pressure in a specific way.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Group. |
| Keywords: | Charge Density Wave; High Pressure Techniques; Lu5Ir4Si10; Uniaxial Pressure |
| ID Code: | 68522 |
| Deposited On: | 05 Nov 2011 05:08 |
| Last Modified: | 05 Nov 2011 05:08 |
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