Diode junctions in single ZnO nanowires as half-wave rectifiers

Abstract

We introduce dopants in a section of ZnO vertical nanowires. This forms a junction in the nanowires that exhibit diode nature in current-voltage characteristics. Under sinusoidal ac voltage, the nanowires act as half-wave rectifiers. Operation of the rectifiers at high frequencies is restricted by a phase lag between current and applied ac voltage. We vary the length of the vertical nanowire junctions and study its effect on rectification characteristics. We find that the phase lag of current is less in shorter nanowire diodes than that in the longer ones. The shorter diodes hence operate until higher frequencies as half-wave rectifiers.