ÖstergArd, T. ; Pal, A. J. ; Paloheimo, J. ; Stubb, H. (1997) Light-emitting diodes of poly (3-hexylthiophene) Langmuir-Blodgett films Synthetic Metals, 85 (1-3). pp. 1249-1250. ISSN 0379-6779
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0379-6779(97)80225-1
Abstract
Poly(3-hexylthiophene) Langmuir-Blodgett films have been used as emitting layers in light-emitting diodes. The effect of the film thickness and additional carrier-transport layers on current-voltage characteristics and quantum efficiency were studied, and the electroluminescence spectra measured. Hole transporting poly(9-vinylcarbazole) was used both as a separate layer in a heterostructure device and in a blend with emitting material. The electron-transport material 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole was used in a blend with the emitting material. The connections between the diode structure and the electro-optical properties as well as operation mechanisms are discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Conjugated Polymers; Electroluminescence; Langmuir-Blodgett Techniques; Light-emitting Diodes; Poly(3-hexylthiophene) |
| ID Code: | 65766 |
| Deposited On: | 18 Oct 2011 08:55 |
| Last Modified: | 18 Oct 2011 08:55 |
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