Rath, Arup K. ; Pal, Amlan J. (2008) Resistive switching in Rose Bengal and other Xanthene molecules is a molecular phenomenon Organic Electronics, 9 (4). pp. 495-500. ISSN 1566-1199
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.orgel.2008.02.013
Abstract
There has been a debate on the mechanism of resistive switching in Rose Bengal and other Xanthene class molecules. While some authors proposed that the switching was due to an oxide layer at the Rose Bengal/Aluminum interface, some inferred the switching as an extrinsic effect like filament formation. We show results from Rose Bengal and other Xanthene class molecules on doped Si. Conductance switching in such monolayers induced by Pt/Ir tip of a scanning tunneling microscope (STM) in a non-contact mode shows that resistive switching in these molecules, initially reported by us in 2003 (in thin films), is indeed a molecular phenomenon.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Conductance Switching; Memory Phenomenon; Molecular Memory |
| ID Code: | 65730 |
| Deposited On: | 18 Oct 2011 09:10 |
| Last Modified: | 18 Oct 2011 09:10 |
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