Östergård, T. ; Paloheimo, J. ; Pal, A. J. ; Stubb, H. (1997) Langmuir-Blodgett light-emitting diodes of poly(3-hexylthiophene) : electro-optical characteristics related to structure Synthetic Metals, 88 (2). pp. 171-177. ISSN 0379-6779
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0379-6779(97)03856-3
Abstract
Poly(3-hexylthiophene) Langmuir-Blodgett (LB) films have been used as the emitting layer in light-emitting diodes (LEDs). In order to develop further the device and increase the quantum efficiency by balancing the number of injected holes and electrons, two different approaches have been taken. Following the more conventional way, LB films of hole- and electron-transporting materials have been used in a separate layer and/or in a blend with the emitting material. Insulating polyaniline LB films at the electrode interfaces have also been used in order to control the operation. A simple model relating the electro-optical characteristics of the LED to its structure has been proposed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Conjugated Polymers; Electroluminescence; Langmuir-Blodgett Films; Light-emitting Diodes; Molecular Electronics |
| ID Code: | 65722 |
| Deposited On: | 18 Oct 2011 08:55 |
| Last Modified: | 18 Oct 2011 08:55 |
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