Layer-by-layer assembly of capped CdSe nanoparticles: electrical bistability and memory phenomenon

Sahu, Satyajit ; Majee, Swarup K. ; Pal, Amlan J. (2007) Layer-by-layer assembly of capped CdSe nanoparticles: electrical bistability and memory phenomenon Applied Physics Letters, 91 (14). pp. 143108-143110. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v91/i14/p1431...

Related URL: http://dx.doi.org/10.1063/1.2793617

Abstract

The authors demonstrate thin-film formation of capped-CdSe nanoparticles via layer-by-layer electrostatic assembly. The assembly of two types of nanoparticles in sequence-with anionic and cationic capping agents, respectively-results in thin films of CdSe nanoparticles. Devices based on such thin films demonstrate electrical bistability. The bistability, which is reversible in nature, is due to charge confinement in the nanoparticles and has an associated memory phenomenon. The devices based on the CdSe nanoparticles exhibit high on/off ratio and demonstrate read-only and random-access memory applications.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Cadmium Compounds; II-VI Semiconductors; Liquid Phase Deposition; Nanoparticles; Self-assembly; Semiconductor Growth; Semiconductor Thin Films; Wide Band Gap Semiconductors
ID Code:65669
Deposited On:17 Oct 2011 10:49
Last Modified:17 Oct 2011 10:49

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