Majumdar, Himadri S. ; Bolognesi, Alberto ; Pal, Amlan J. (2004) Switching and memory devices based on a polythiophene derivative for data-storage applications Synthetic Metals, 140 (2-3). pp. 203-206. ISSN 0379-6779
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0379-6779(03)00377-1
Abstract
In this article, we report electrical characteristics of devices based on oriented and unoriented films of a polymer, namely poly[3-(6-methoxyhexyl)thiophene]. The current-voltage characteristics of sandwiched devices, based on unoriented polymer, showed hysteresis behavior, while oriented versions exhibited switching characteristics, i.e. presence of two conducting states depending on sweep direction of voltage scans. The ratio between the device current of two conducting states has been as high as 105. This is comparable, if not better, than the results reported so far with complicated device architecture or doped polymeric materials. We have also demonstrated that the switching devices have an associated memory effect for data-storage applications.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Synthetic Metals. |
| Keywords: | Conjugated Polymer; Data-storage Device; Displacement Current; Memory Applications; Conductance Switching; Space Charges |
| ID Code: | 65648 |
| Deposited On: | 17 Oct 2011 10:46 |
| Last Modified: | 17 Oct 2011 10:46 |
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