Bose, Anindita ; Basu, Soumen ; Banerjee, Sourish ; Chakravorty, Dipankar (2005) Electrical properties of compacted assembly of copper oxide nanoparticles Journal of Applied Physics, 98 (7). 074307_1-074307_5. ISSN 0021-8979
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Official URL: http://link.aip.org/link/?JAPIAU/98/074307/1
Related URL: http://dx.doi.org/10.1063/1.2084311
Abstract
Cu2O nanoparticles with diameters in the range 6.0-8.6 nm were prepared by a chemical method. Both dc and ac electrical properties were measured on a compacted nanoparticle assembly. dc electrical resistivity in the temperature range 140-300 K was found to arise due to a variable range hopping conduction mechanism. The ac resistivity variation as a function of frequency (in the range 10 kHz to 3 MHz) and temperature (range 220-320 K) was explained on the basis of the power-law exponent in percolating clusters. The interfacial amorphous phase of the nanoparticle assembly appears to control the electrical behavior of the system.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Copper Compounds; Nanoparticles; Electrical Resistivity; Hopping Conduction; Amorphous State |
ID Code: | 65259 |
Deposited On: | 17 Oct 2011 03:36 |
Last Modified: | 17 Oct 2011 03:36 |
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