Mukherjee, P. K. ; Chakravorty, D. (2004) Growth of CdS nanowires using Na-4 mica as template Journal of Applied Physics, 95 (6). pp. 3164-3169. ISSN 0021-8979
Full text not available from this repository.
Official URL: http://link.aip.org/link/?JAPIAU/95/3164/1
Related URL: http://dx.doi.org/10.1063/1.1649810
Abstract
Sodium flourophlogopite mica of composition Na4Mg6Al4Si4O20F4·xH2O (referred to as Na-4 mica) was prepared by a sol-gel technique. CdS nanowires of 1.2 nm thickness were grown by using the nanochannels within the mica structure. Optical absorption spectra showed peaks at 350 and 504 nm, respectively. These are ascribed to the presence of CdS nanoclusters of diameter ~1.21 nm and CdS wires of length ~100 nm, respectively. The nanowires exhibited a photoluminescent peak at 2.37 eV arising due to excitons. The dielectric constant of the nanocomposite was found to be much larger (~95) than that of the base material (~17). This has been explained on the basis of a simple stacking of nanoscale capacitors within each grain of Na-4 mica.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Cadmium Compounds; II-VI Semiconductors; Wide Band Gap Semiconductors; Nanowires; Sol-gel Processing; Semiconductor Growth; Photoluminescence; Permittivity; Nanocomposites |
| ID Code: | 65046 |
| Deposited On: | 15 Oct 2011 12:18 |
| Last Modified: | 15 Oct 2011 12:18 |
Repository Staff Only: item control page
