Electrical resistivity of silver-silica nanocomposites

Banerjee, S. ; Chakravorty, D. (1999) Electrical resistivity of silver-silica nanocomposites Journal of Applied Physics, 85 (7). pp. 3623-3625. ISSN 0021-8979

Full text not available from this repository.

Official URL: http://link.aip.org/link/?JAPIAU/85/3623/1

Related URL: http://dx.doi.org/10.1063/1.369724


Nanoparticles of silver with diameters in the range 10.3-25.7 nm were grown within a silica gel medium by an electrodeposition technique. The dc resistivity of the nanocomposites was measured over the temperature range 100-300 K. The resistivity as a function of inverse temperature shows a maximum at around 175 K. This is explained as arising due to the presence of two conduction mechanisms, viz., an electron tunnelling between metal particles and conduction through a percolated metal structure which is fractal in nature.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Silver; Silicon Compounds; Composite Materials; Nanostructured Materials; Electrical Resistivity; Percolation; Electrodeposition; Tunnelling
ID Code:65022
Deposited On:15 Oct 2011 12:14
Last Modified:15 Oct 2011 12:14

Repository Staff Only: item control page