Banerjee, S. ; Chakravorty, D. (1999) Electrical resistivity of silver-silica nanocomposites Journal of Applied Physics, 85 (7). pp. 3623-3625. ISSN 0021-8979
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Official URL: http://link.aip.org/link/?JAPIAU/85/3623/1
Related URL: http://dx.doi.org/10.1063/1.369724
Abstract
Nanoparticles of silver with diameters in the range 10.3-25.7 nm were grown within a silica gel medium by an electrodeposition technique. The dc resistivity of the nanocomposites was measured over the temperature range 100-300 K. The resistivity as a function of inverse temperature shows a maximum at around 175 K. This is explained as arising due to the presence of two conduction mechanisms, viz., an electron tunnelling between metal particles and conduction through a percolated metal structure which is fractal in nature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Silver; Silicon Compounds; Composite Materials; Nanostructured Materials; Electrical Resistivity; Percolation; Electrodeposition; Tunnelling |
| ID Code: | 65022 |
| Deposited On: | 15 Oct 2011 12:14 |
| Last Modified: | 15 Oct 2011 12:14 |
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