Kumar, D. ; Chakravorty, D. (1980) Electrical properties of silicate glasses containing arsenic oxide Journal of Physics D: Applied Physics, 13 (7). pp. 1331-1338. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/13/7/029
Related URL: http://dx.doi.org/10.1088/0022-3727/13/7/029
Abstract
DC and AC resistivities of some silicate glasses containing both As3+ and As5+ ions have been measured over a temperature range −150°C to 200°C. The resistivities show a sharp minimum at around 40°C. the AC resistivity at temperatures below −20°C is shown to arise due to bipolaronic hopping over a potential barrier between defect sites. For temperatures in the range −20°C and 30°C the data can be explained on the basis of quantum mechanical tunnelling between localised states at the band edge.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 64889 |
| Deposited On: | 14 Oct 2011 12:15 |
| Last Modified: | 14 Oct 2011 12:15 |
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