Pal, Suparna ; Singh, S. D. ; Porwal, S. ; D'Souza, S. W. ; Barman, S. R. ; Oak, S. M. (2010) Comparative study on passivation of GaAs0.86P0.14/Al0.6Ga0.4As near-surface quantum well Journal of Vacuum Science and Technology A, 28 (6). 1319 _1-1319 _7. ISSN 0734-2101
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Official URL: http://avspublications.org/jvsta/resource/1/jvtad6...
Related URL: http://dx.doi.org/10.1116/1.3490021
Abstract
The authors report a comparative study on ex situ passivation of a near-surface GaAs0.86P0.14/Al0.6Ga0.4As quantum well using various sulfide solutions and nitrogen plasma treatments. The built-in surface electric field is changed via band bending by applying various surface passivation conditions. The band bending is measured using x-ray photoelectron spectroscopy. Reduction in surface electric field in the range of 10-35 kV/cm is observed depending on different passivation conditions. The photoreflectance spectra show enhancement in intensity and blueshift of ~3 meV accompanied by significant reduction in the broadening parameter of the observed e1-lh1 transitions. Among all the methods studied here, passivation by Na2S⋅xH2O is found to be most effective as it removes the native oxide layer completely leading to almost flat band condition.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium Compounds; Bending; Gallium Arsenide; III-V Semiconductors; Passivation; Photoreflectance; Plasma Materials Processing; Semiconductor Quantum Wells; Spectral Line Shift; X-ray Photoelectron Spectra; GaAsP/AlGaAs; Nitride; Sulfide |
| ID Code: | 64613 |
| Deposited On: | 12 Oct 2011 05:24 |
| Last Modified: | 12 Oct 2011 05:24 |
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