Sebastian, M. T. ; Narayanan, K. ; Krishna, P. (1987) X-ray diffraction effects from 2H crystals undergoing transformation to the 3C structure by the layer displacement mechanism Physica Status Solidi A, 102 (1). pp. 241-249. ISSN 0031-8965
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.22...
Related URL: http://dx.doi.org/10.1002/pssa.2211020124
Abstract
On annealing at elevated temperatures 2H silicon carbide crystals transform to a disordered twinned 3C structure. It is suggested that the transformation proceeds by nucleation and propagation of stacking faults causing layer-displacement in the solid state. The theory of X-ray diffraction for 2H crystals is developed undergoing transformation to the 3C phase by such a mechanism. The different diffraction effects such as peak breadth and peak broadening are predicted.
Item Type: | Article |
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Source: | Copyright of this article belongs to John Wiley and Sons. |
ID Code: | 63849 |
Deposited On: | 03 Oct 2011 06:03 |
Last Modified: | 03 Oct 2011 06:03 |
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