X-ray diffraction effects from 2H crystals undergoing transformation to the 3C structure by the layer displacement mechanism

Abstract

On annealing at elevated temperatures 2H silicon carbide crystals transform to a disordered twinned 3C structure. It is suggested that the transformation proceeds by nucleation and propagation of stacking faults causing layer-displacement in the solid state. The theory of X-ray diffraction for 2H crystals is developed undergoing transformation to the 3C phase by such a mechanism. The different diffraction effects such as peak breadth and peak broadening are predicted.