Krishna, P. ; Marshall, R. C. (1971) Direct transformation from the 2H to the 6H structure in single-crystal silicon carbide Journal of Crystal Growth, 11 (2). 147-150 . ISSN 0022-0248
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0022-0248(71)90178-3
Abstract
A direct transformation from the ABAB… to the ABCACB… packing has been observed in silicon carbide single crystals, on annealing at 2400 °C in argon atmosphere. The structural change was observed as a function of time, using X-ray diffraction methods, and did not proceed via the cubic or twinned intermediate states observed in annealing experiments at lower temperatures. The mechanism of the 2H-6H and 3C-6H solid-state transformations in SiC is discussed along with their thermodynamic stability.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 63810 |
Deposited On: | 01 Oct 2011 13:10 |
Last Modified: | 01 Oct 2011 13:10 |
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