Constitutive response of passivated copper films to thermal cycling

Shen, Y.-L. ; Ramamurty, U. (2003) Constitutive response of passivated copper films to thermal cycling Journal of Applied Physics, 93 (3). pp. 1806-1812. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v93/i3/p1806_...

Related URL: http://dx.doi.org/10.1063/1.1535731

Abstract

The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films of thickness ranging from 125 to 1000 nm, deposited on quartz or silicon substrates and passivated with silicon oxide, were measured using the curvature method. The thermal cycling spans a temperature range from -196 to 600° C. The measured mechanical behavior was found to be rate insensitive within the heating/cooling rate range of 5-25°C/min. It was observed that the passivated films do not exhibit a significant stress relaxation at elevated temperatures that is normally found in unpassivated films. Furthermore, a significant strain hardening during the course of thermal loading was noted. Simple continuum plasticity analyses show that the experimentally measured stress-temperature response can only be rationalized with a kinematic hardening model. Analytical procedures for extracting the constitutive properties of the films that were developed on the basis of such a model are presented. The initial yield strength is higher and tends to be less temperature dependent in thinner films. The strain hardening rate is found to increase with decreasing film thickness.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Copper; Metallic Thin Films; Work Hardening; Yield Strength; Plasticity; Integrated Circuit Metallisation; Thermomechanical Treatment
ID Code:62488
Deposited On:22 Sep 2011 03:06
Last Modified:22 Sep 2011 03:06

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