Maiti, Kalobaran ; Fink, Jörg ; Jong, Sanne de ; Gorgoi, Mihaela ; Lin, Chengtian ; Raichle, Markus ; Hinkov, Vladimir ; Lambacher, Michael ; Erb, Andreas ; Golden, Mark S. (2009) Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+xand La2-xSrxCuO4 using hard X-ray photoemission spectroscopy Physical Review B: Condensed Matter and Materials Physics, 80 (16). 165132_1-165132_16. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v80/i16/e165132
Related URL: http://dx.doi.org/10.1103/PhysRevB.80.165132
Abstract
The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard X-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex, leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core-level spectra exhibits a shift in binding energy as a function of x, from which a shift of the chemical potential as a function of hole concentration in the CuO2 layers could be derived. The doping dependence of the chemical potential across the transition from a Mott-Hubbard insulator to a Fermi-liquid-like metal is very different in these two series of compounds. In agreement with previous studies in the literature the chemical-potential shift in La2-xSrxCuO4 is close to zero for small hole concentrations. In YBa2Cu3O6+x, similar to all other doped cuprates studied so far, a strong shift of the chemical potential at low hole doping is detected. However, the results for the inverse charge susceptibility at small x shows a large variation between different doped cuprates. The results are discussed in view of various theoretical models. None of these models turns out to be satisfactory.
Item Type: | Article |
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Source: | Copyright of this article belongs to The American Physical Society. |
ID Code: | 62235 |
Deposited On: | 20 Sep 2011 09:45 |
Last Modified: | 18 May 2016 11:36 |
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