Inherent instabilities of some W₅Si₃-type binary phases with large electropositive metal atoms: six examples in the Ba-Pb, Ca-Sn-Mg,Cu,Zn, and La-Ga-Al,Zn systems

Abstract

A particular pathology of certain W₅Si₃-type A₅B₃ structures (I4/mcm) appears to arise because of unduly close approaches of the A1-type atoms on the cell faces at ½, 0, (¼, 3/4) that occur with the larger and more electropositive A and/or in the presence of smaller B atoms. A structure refinement of binary Ba_4.81Pb₃ indicates such a marginal stability in that the Ba atoms in the facial Ba_0.81 chains exhibit an extreme displacement ellipsoid along c̅→. Although Ca₅Sn₃ and La₅Ga₃ binaries are unknown in this structure type, five stable ternary derivatives of these have been synthesized via substitution reactions and characterized by single crystal X-ray diffraction means: Ca₄Sn_3.223(4)Mg_0.777, Ca₄Sn₃Cu_1.30(4), Ca_4.66(6)Sn₃Zn_0.704(4), La_4.81(1)Ga_1.38(2)Al_1.62, and La_4.762(5)Ga_1.5(1)Zn_1.5. Only the Ca-Sn-Zn phase exhibits lower symmetry, P4/mbm. The problematic A1 sites exhibit diverse changes in these, whereas the surrounding B2 tetrahedra are largely unaltered. The Ca-Sn results are, respectively: direct Mg/Sn substitution at the Ca1 site; mixed fractional distribution of the smaller Cu at two sites around the A1 position with an unresolved disorder; a pair of apparently independent modes, fractional Ca in the normal position and fractional Zn rectangles thereabout. The two La-Sn phases contain normal Ga,Al (Ga,Zn) tetrahedral chains with pairs of fractional disordered La atoms along ½, 0, z. Each can be rationalized in terms of a reasonable incommensurate structure. Electronic effects may also be operable.