Umarji, A. M. ; Godart, C. ; Gupta, L. C. ; Vijayaraghavan, R. (1987) Spin fluctuation changes in Ge doped YbPd2Si2 Journal of Magnetism and Magnetic Materials, 63-64 . pp. 623-625. ISSN 0304-8853
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0304-8853(87)90686-X
Abstract
In YbPd2Si2, the valence of Yb is very close to 3+. Ge substitution of Si induces a negative pressure effect and the valence of Yb decreases. For the low Ge concentrations studied, the spin fluctuation temperature Tsf increases and x4f, the Yb derived 4f susceptibility, obeys the scaling law x4f(T) = F(T/Tsf).
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 61804 |
| Deposited On: | 15 Sep 2011 11:46 |
| Last Modified: | 15 Sep 2011 11:46 |
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