Spin fluctuation changes in Ge doped YbPd2Si2

Umarji, A. M. ; Godart, C. ; Gupta, L. C. ; Vijayaraghavan, R. (1987) Spin fluctuation changes in Ge doped YbPd2Si2 Journal of Magnetism and Magnetic Materials, 63-64 . pp. 623-625. ISSN 0304-8853

Full text not available from this repository.

Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0304-8853(87)90686-X

Abstract

In YbPd2Si2, the valence of Yb is very close to 3+. Ge substitution of Si induces a negative pressure effect and the valence of Yb decreases. For the low Ge concentrations studied, the spin fluctuation temperature Tsf increases and x4f, the Yb derived 4f susceptibility, obeys the scaling law x4f(T) = F(T/Tsf).

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:61804
Deposited On:15 Sep 2011 11:46
Last Modified:15 Sep 2011 11:46

Repository Staff Only: item control page