Pal, S. ; Sanyal, M. K. ; Hazra, S. ; Kundu, S. ; Schreiber, F. ; Pflaum, J. ; Barrena, E. ; Dosch, H. (2004) Morphology and transport properties of nanostructural gold on silicon Journal of Applied Physics, 95 (3). pp. 1430-1435. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v95/i3/p1430_...
Related URL: http://dx.doi.org/10.1063/1.1635989
Abstract
Nanometer sized Au clusters deposited on a silicon substrate forming Au-SiO2-Si structure are important for the development of contacts in nanotechnology. Systematic X-ray reflectivity, scanning probe microscopy, and scanning tunneling spectroscopy measurements were done to understand the relationship between morphology and electrical transport properties of this nanostructural metal-insulator-semiconductor system. The presence of an interfacial layer at the metal-insulator interface dictates the tunneling current through this structure and exhibits a gap leading to a suppression of current. Local density of states and electron density/thickness of the interfacial layer have been extracted from the measurements to understand the evolution of metallicity of this Au-SiO2-Si structure.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Gold; Silicon Compounds; Silicon; MIS Structures; Nanoparticles; Scanning Tunnelling Spectroscopy; X-ray Reflection; Scanning Tunnelling Microscopy; Scanning Probe Microscopy; Electronic Density of States; Interface States; Tunnelling; Surface Morphology; Metal Clusters |
ID Code: | 61362 |
Deposited On: | 15 Sep 2011 03:46 |
Last Modified: | 18 May 2016 11:06 |
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