The effect of growth defects on the X-ray reflectivity of multilayer systems

Abstract

Using the X-ray reflectivity technique to determine the electron density profiles of multilayer thin films is becoming increasingly popular. We present here a computer simulation study of the effect of various growth defects of these multilayer films on their reflectivity profiles. The results are illustrated with the help of an MBE-grown GaAs-AlAs multilayer sample. These results will be useful to identify distinct signatures of various growth defects in the experimentally observed reflectivity curves and in turn would be helpful in constructing a physically meaningful model for electron density profiles of multilayer systems.